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january 2016 docid027677 rev 3 1 / 15 this is information on a product in full production. www.st.com STB18N60DM2 n - channel 600 v, 0.260 typ., 12 a mdmesh? dm2 power mosfet in a d2pak package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STB18N60DM2 600 v 0.295 12 a ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching a pplications description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t r r ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift converters. table 1: device summary order code marking package packing STB18N60DM2 18n60dm2 d2pak tape and reel am15572v1_tab d(2, t ab) g(1) s(3) 1 3 t ab d 2 p a k 2
contents STB18N60DM2 2 / 15 docid027677 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 d2pak (to - 263) type a package information ................................ ... 9 4.2 d2p ak packing information ................................ ............................. 12 5 revision history ................................ ................................ ............ 14
STB18N60DM2 electrical ratings docid027677 rev 3 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 12 a drain current (continuous) at t case = 100 c 7.6 i dm (1) drain current (pulsed) 48 a p tot total dissipation at t case = 25 c 90 w dv/dt (2) peak diode recovery voltage slope 40 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature range C 55 to 150 c t j o perating junction temperature range notes: (1) pulse width is limited by safe operating area. (2) i sd 12 a, di/dt 400 a/s, v ds(peak) < v (br)dss , v dd = 80% v (br)dss . (3) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 1.39 c/w r thj - pcb (1) thermal resistance junction - pcb 30 notes: (1) when mounted on 1 a inch2 fr - 4, 2 oz copper board table 4: avalanche characteristics symbol parameter value unit i ar (1) avalanche current, repetitive or not repetitive 2.5 a e ar (2) single pulse avalanche energy 380 mj notes: (1) pulse width is limited by t jmax . (2) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristics STB18N60DM2 4 / 15 doci d027677 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1.5 a v gs = 0 v, v ds = 600 v, t case = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 6 a 0.260 0.295 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 800 - pf c oss output capacitance - 40 - c rss reverse transfer capacitance - 1.33 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, f = 1 mhz, v gs = 0 v - 80 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 5.6 - q g total gate charge v dd = 480 v, i d = 12 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 20 - nc q gs gate - source charge - 5.2 - q gd gate - drain charge - 8.5 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 6 a r g = 4.7 , v gs = 10 v (see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 13.5 - ns t r rise time - 8 - t d(off) turn - off - delay time - 9.5 - t f fall time - 32.5 -
STB18N60DM2 electrical characteristics docid027677 rev 3 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 12 a i sdm (1) source - drain current (pulsed) - 48 a v sd (2) forward on voltage v gs = 0 v, i sd = 12 a - 1.6 v t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 125 ns q rr reverse recovery charge - 0.675 nc i rrm reverse recovery current - 11 a t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 190 ns q rr reverse recovery charge - 1225 nc i rrm reverse recovery current - 13 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STB18N60DM2 6 / 15 doci d027677 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STB18N60DM2 electrical characteristics docid027677 rev 3 7 / 15 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normal ized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics figure 13 : output capacitance stor e d energy
test circuits STB18N60DM2 8 / 15 doci d027677 rev 3 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
STB18N60DM2 package information docid027677 rev 3 9 / 15 4 package information in order to meet environmental requirements, st offers these de vices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak (to - 263) type a package in formation figure 20 : d2pak (to - 263) type a package outline 0079457_a_rev22
package information STB18N60DM2 10 / 15 doci d027677 rev 3 table 9: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
STB18N60DM2 package information docid027677 rev 3 11 / 15 figure 21 : d2pak (to - 263) recommended footprint (dimensions are in mm)
package information STB18N60DM2 12 / 15 doci d027677 rev 3 4.2 d2pak packing information figure 22 : tape outline
STB18N60DM2 package information docid027677 rev 3 13 / 15 figure 23 : reel outline table 10: d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3
revision history STB18N60DM2 14 / 1 5 doci d027677 rev 3 5 revision history table 11: document revision history date revision changes 01 - apr - 2015 1 first release. 20 - may - 2015 2 text edits and formatting changes throughout document in section 2.1 electrical characteristics (curves): - updated figure 4: output characteristics - updated figure 5: transfer characteristics 28 - jan - 2016 3 updated figure 13: "output capacitance storaged energy"
STB18N60DM2 docid027677 rev 3 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from t he information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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